Technical Details
Samsung 990 EVO 1TB M.2 NVMe Gen4 SSD (MZ-V9E1T0BW)
P/N | MZ-V9E1T0BW |
Model | 990 EVO NVMe M.2 SSD |
Capacity | 1TB |
General Feature | |
Application | Client PCs |
Capacity | 2,000GB (1GB=1 Billion byte by IDEMA) * Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise) |
Form Factor | M.2 (2280) |
Interface | PCIe® 4.0 x4 / 5.0 x2 NVMe™ 2.0 |
Dimension (WxHxD) | 80 x 22 x 2.38 mm |
Weight | Max 9.0g Weight |
Storage Memory | Samsung V-NAND TLC |
Controller | Samsung in-house Controller |
Cache Memory | HMB(Host Memory Buffer) |
Special Feature | |
TRIM Support | Supported |
S.M.A.R.T Support | Supported |
GC (Garbage Collection) | Auto Garbage Collection Algorithm |
Encryption Support | AES 256-bit Encryption (Class 0)TCG/Opal IEEE1667 (Encrypted drive) |
WWN Support | Not supported |
Device Sleep Mode Support | Yes |
Performance | |
Sequential Read | Up to 5,000 MB/s * Performance may vary based on system hardware & configuration |
Sequential Write | Up to 4,200 MB/s * Performance may vary based on system hardware & configuration |
Random Read (4KB, QD32) | Up to 700,000 IOPS * Performance may vary based on system hardware & configuration |
Random Write (4KB, QD32) | Up to 800,000 IOPS * Performance may vary based on system hardware & configuration |
Random Read (4KB, QD1) | Up to 20,000 IOPS * Performance may vary based on system hardware & configuration |
Random Write (4KB, QD1) | Up to 90,000 IOPS * Performance may vary based on system hardware & configuration |
Environment | |
Average Power Consumption (system level) | *Average: Read 5.5 W / Write 4.7 W* Actual power consumption may vary depending on system hardware & configuration |
Power consumption (Idle) | Typical 60 mW * Actual power consumption may vary depending on system hardware & configuration |
Power Consumption (Device Sleep) | Typical 5 mW * Actual power consumption may vary depending on system hardware & configuration |
Allowable Voltage | 3.3 V ± 5 % Allowable voltage |
Reliability (MTBF) | 1.5 Million Hours Reliability (MTBF) |
Operating Temperature | 0 – 70 ℃ Operating Temperature |
Shock | 1,500 G & 0.5 ms (Half sine) |
Accessories | |
Installation Kit | Not Available |
Software | |
Management SW | Magician Software for SSD management |
Warranty | 5-year Limited Warrantyor 1200 TBW Limited Warranty |
Features:
- Sequential read speed up to 5000 MB/s
- Elevate everyday performance in Gaming, Business, Creative work with PCIe 4.0 x 4 and PCIe 5.0 x 2 compatibility
- 70% enhanced power efficiency supporting modern standby and longer battery life
Performance
Upgrade to faster sequential read speed up to 5,000 MB/s, reaching 43% faster than the previous model.
Power efficiency
70% enhanced power efficiency compared to the previous model, supporting Modern Standby and longer battery life.
Versatility
Elevate everyday performance in gaming, business, and creative work with PCIe® 4.0 x4 and PCIe® 5.0 x2 compatibility.
Speed that stays ahead
The 990 EVO offers enhanced sequential read/write speeds up to 5,000/4,200 MB/s, and random read/write speeds up to 700K/800K IOPS, reaching 43% faster than the 970 EVO Plus 2TB. Wait less for games and access big files quick.
Smart thermal solution
The 990 EVO’s heat spreader label helps thermal control of the NAND chip. Samsung’s cutting-edge thermal control algorithm, paired with Dynamic Thermal Guard, ensures both consistent and reliable performance. Keep your performance red-hot, not your drive.
Samsung Magician software
Make your SSD works like magic. Samsung Magician software’s optimization tools ensure the best SSD performance. It’s the safe and easy way to migrate all your data for a Samsung SSD upgrade. Protect valuable data, monitor drive health, and get the latest firmware updates.
Bringing innovations to life
For decades, Samsung’s NAND flash memory has powered groundbreaking technologies that have changed every part of our daily lives. This NAND flash technology also powers our consumer SSDs, making room for the next big push of innovation.