SAMSUNG 990 EVO Plus 2TB M.2 NVMe Gen4 SSD(MZ-V9S2T0BW)
Features:
- Application – Client PCs
- Interface – PCIe 4.0 x4 / 5.0 x2 NVMe 2.0
- Dimension (Pack: WxHxD) – Max 80.15 x Max 22.15 x Max 2.38 mm
- Weight – Max 9.0g Weight
- Performance – Up to 7,250 MB/s
- Sequential Write – up to 6,300 MB/s
- Warranty – 5-year Limited Warranty or 1200 TBW Limited Warranty
Cool power through your day
Optimised efficiency, extended performance. The nickel-coated controller increases MB/s per Watt by 73%, achieving the same power level and thermal control with less power consumption. Stay focused on work or play with no overheating or battery life worries.
Samsung Magician software
Make your SSD work like magic. Samsung Magician software’s optimisation tools ensure the best SSD performance. It’s a safe and easy way to migrate all your data for a Samsung SSD upgrade. Protect valuable data, monitor drive health, and get the latest firmware updates.
Bringing innovations to life
For decades, Samsung’s NAND flash memory has powered ground-breaking technologies that have changed our daily lives. This NAND flash technology also powers our SSDs, making room for the next big push of innovation.
- The 990 EVO Plus brings boosted sequential read/write speeds up to 7,250/6,300MB/s.¹
- Harness the full power of your drive with the enhanced large-file performance of Intelligent TurboWrite 2.0—now available in 4TB capacity.
- Keep your cool as you work—or play—with no worries about overheating or battery life, thanks to an efficiency-boosting nickel-coated controller.
- Optimized to support the latest technology for SSDs—990 EVO Plus is compatible with PCIe 4.0 x4 and PCIe 5.0 x2.
- It’s not hocus-pocus. Your 990 EVO Plus SSD performs like new with the always up-to-date Magician Software.
Technical Details
P/N | MZ-V9S2T0BW |
Series | 990 evo |
Interface | pCIe® 4.0 x4 / 5.0 x2 NVMe™ 2.0 |
Dimension (WxHxD) | Max 80.15 x Max 22.15 x Max 2.38 mm |
Weight | Max 9.0g Weight |
performance | Up to 7,250 MB/s * performance may vary based on system hardware & configuration |
Sequential Write | Up to 6,300 MB/s * performance may vary based on system hardware & configuration |
Warranty | 5-year limited Warranty or 1200 TBW limited Warranty |
Application | Client pCs |
Rated Capacity | 2,000GB (1GB=1 Biltron byte by IDEMA) * Actual usable capacity may be less (due to formatting, partitioning, otderating system, atdtdtrcations or otherwise) |
Form Factor | M.2 (2280) |
Interface | pCIe® 4.0 x4 / 5.0 x2 NVMe™ 2.0 |
Dimension (WxHxD) | Max 80.15 x Max 22.15 x Max 2.38 mm |
Weight | Max 9.0g Weight |
Storage Memory | Samsung V-NAND TLC |
Controller | Samsung in-house Controller |
Cache Memory | HMB(Host Memory Buffer) |
TRIM Support | Supported |
S.M.A.R.T Support | Supported |
GC (Garbage Collection) | Auto Garbage Collection Algorithm |
Encryption Support | AES 256-bit Encryption (Class 0)TCG/Otdal IEEE1667 (Encrypted drive) |
WWN Support | Not supported |
Device Sleep Mode Support | Yes |
Sequential Read | Up to 7,250 MB/s * performance may vary based on system hardware & configuration |
Sequential Write | Up to 6,300 MB/s * performance may vary based on system hardware & configuration |
Random Read (4KB, QD32) | Up to 1,000,000 IOpS * performance may vary based on system hardware & configuration |
Random Write (4KB, QD32) | Up to 1,350,000 IOpS * performance may vary based on system hardware & configuration |
Average power Consumption (system level) | Average: Read 4.6 W / Write 4.2 W* Actual power consumption may vary depending on system hardware configuration |
power consumption (Idle) | Typical 60 mW * Actual power consumption may vary depending on system hardware & configuration |
power Consumption (Device Sleep) | Typical 5 mW * Actual power consumption may vary depending on system hardware & configuration |
Allowable Voltage | 3.3 V ± 5 % Allowable voltage |
Reliability (MTBF) | 1.5 Million Hours Reliability (MTBF) |
Operating Temperature | 0 – 70 ℃ Operating Temperature |
Shock | 1,500 G & 0.5 ms (Half sine) |